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Band-gap and correlation effects in the organic semiconductor Alq(3) - art. no. 033204

机译:有机半导体Alq(3)中的带隙和相关效应-艺术没有。 033204

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摘要

We present a spectroscopic study of the electronic properties of a molecular organic semiconductor Alq(3), and its potassium intercalation compound KAlq(3). It is argued that both compounds are strongly correlated materials with a band gap that is to a large extent determined by electron correlation effects. In particular, the Coulomb repulsion energy for two electrons on an Alq(3) molecule in the solids is about 1.4 eV that renders KAlq(3) a Mott-Hubbard insulator and causes a large exciton binding energy in solid Alq(3). The implications of these results for organic devices are discussed. [References: 40]
机译:我们目前对分子有机半导体Alq(3)及其钾嵌入化合物KAlq(3)的电子性质进行光谱研究。认为这两种化合物都是强相关材料,其带隙在很大程度上取决于电子相关效应。特别是,固体中Alq(3)分子上两个电子的库仑排斥能约为1.4 eV,这使KAlq(3)成为Mott-Hubbard绝缘子,并在固体Alq(3)中引起大的激子结合能。讨论了这些结果对有机器件的影响。 [参考:40]

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