首页> 外国专利> Method for removing the harmful effects of organic halogen compound gas, apparatus for removing the harmful effects of organic halogen compound gas, system for fabricating semiconductor devices, and method for fabricating semiconductor devices

Method for removing the harmful effects of organic halogen compound gas, apparatus for removing the harmful effects of organic halogen compound gas, system for fabricating semiconductor devices, and method for fabricating semiconductor devices

机译：去除有机卤素化合物气体的有害影响的方法，去除有机卤素化合物气体的有害影响的设备，用于制造半导体器件的系统以及用于制造半导体器件的方法

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摘要

The invention provides a method for removing the harmful effects of organic halogen compound gas, in which an organic halogen compound gas (20) discharged by a production unit (8) is transferred into an organic halogen compound-decomposing unit (4) via an adsorbing part (6) that contains an adsorbent (60), followed by decomposing the organic halogen compound gas (20) in the organic halogen compound-decomposing unit (4), and provides an apparatus for removing the harmful effects of organic halogen compound gas, a system for fabricating semiconductor devices, and a method for fabricating semiconductor devices.

机译：本发明提供了消除有机卤素化合物气体的有害影响的方法，其中转移了由生产单元（ 8 ）排出的有机卤素化合物气体（ 20 ）。通过含有吸附剂（ 60 ）的吸附部分（ 6 ）进入有机卤素化合物分解单元（ 4 ），然后分解有机卤素化合物分解单元（ 4 ）中的有机卤素化合物气体（ 20 ），并提供了一种消除有机卤素化合物气体有害影响的装置，用于制造半导体器件的系统，以及用于制造半导体器件的方法。 展开▼

著录项

公开/公告号US2003072703A1

专利类型

公开/公告日2003-04-17

原文格式PDF

申请/专利权人 SUGIURA TOSHIKAZU;
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申请/专利号US20020242327

发明设计人 TOSHIKAZU SUGIURA;
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申请日2002-09-12

分类号C01B7/00;

国家 US

入库时间 2022-08-22 00:11:33

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