Auger recombination in narrow-gap semiconductor superlattices - art. no. 045324

摘要

An extended k.p formalism has been developed to describe wave functions in narrow-band-gap semiconductors and narrow-band-gap superlattices. The model shows very satisfactory agreement with various experimental results such as optical absorption spectra in both bulk narrow-gap semiconductors and in narrow-gap superlattices. Based on the model we calculate the Auger recombination rates in InAsSb alloys and in InAsSb-based superlattices. We demonstrate that the Auger recombination coefficient of the superlattices may be larger or smaller than that of bulk alloys of similar gaps depending on the superlattice structure. From the study of several structures we propose a design strategy for minimizing the Auger recombination. [References: 35]