Electron-electron relaxation effect on Auger recombination in direct-band semiconductors - art. no. 073205

摘要

Influence of electron-electron relaxation processes on Auger recombination rate in direct band semiconductors is investigated. Comparison between carrier-carrier and carrier-phonon relaxation processes is provided. It is shown that relaxation processes are essential if the free path length of carriers does not exceed a certain critical value, which exponentially increases with temperature. For illustration of obtained results a typical InGaAsP compound is used. [References: 11]