首页> 外国专利> OPTICAL SWITCHES AND DETECTORS UTILIZING INDIRECT NARROW-GAP SUPERLATTICES AS THE OPTICAL MATERIAL.

OPTICAL SWITCHES AND DETECTORS UTILIZING INDIRECT NARROW-GAP SUPERLATTICES AS THE OPTICAL MATERIAL.

机译:光学开关和检测器利用间接的窄间隙超晶格作为光学材料。

摘要

The present invention relates to novel optical devices operating in the infrared, based on indirect narrow-gap superlattices (INGS) as the active optical materials. The novel optical devices include (1) wideband all-optical switches, which combine small insertion loss at low light intensities with efficient optical switching and optical limiting at high efficiency and low tunneling noise currents, suitable for use in longwave infrared focal plane arrays. INGS comprise multiple semimetal (22) semiconductor (26) layers having compatible crystal symmetry across each heterojunction between a given semimetal (22) sandwiched between semiconductor layers (26). Each semiconductor layer (26) is thin enough that there is coupling between adjacent semiconductor layers (26). The present invention utilizes INGS, which are fabricated to meet the criteria Eindg θφ Edirg, especially where θφ 100 meV, as the optical material for optical switches. The present invention also utilizes INGS as optical detectors if they are fabricated such that Eindg Edirg θφ, especially where θφ is less than 100 meV.
机译:本发明涉及基于间接窄间隙超晶格(INGS)作为活性光学材料的在红外下工作的新型光学器件。新颖的光学设备包括(1)宽带全光开关,该开关将低光强度下的小插入损耗与高效率和低隧穿噪声电流下的有效光开关和光学限制相结合,适用于长波红外焦平面阵列。 INGS包括多个半金属(22)半导体(26)层,该半金属(22)半导体层跨过夹在半导体层(26)之间的给定半金属(22)之间的每个异质结具有兼容的晶体对称性。每个半导体层(26)足够薄,以使得相邻的半导体层(26)之间存在耦合。本发明利用被制造为满足标准Eindg <θφ<Edirg,特别是其中θφ<100meV的ING的INGS作为光开关的光学材料。如果将INGS制造为使得Eindg <Edirg <θφ,特别是在θφ小于100meV的情况下,本发明也将INGS用作光检测器。

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