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OPTICAL SWITCHES AND DETECTORS UTILIZING INDIRECT NARROW-GAP SUPERLATTICES AS THE OPTICAL MATERIAL

机译:利用间接窄间隙超晶格作为光学材料的光学开关和检测器

摘要

The present invention relates to novel optical devices operating in the infrared, based on indirect narrow-gap superlattices (INGS) as the active optical materials. The novel optical devices include (1) wideband all-optical switches, which combine small insertion loss at low light intensities with efficient optical switching and optical limiting at high intensities, and (2) wideband infrared detectors with high collection efficiency and low tunneling noise currents, suitable for use in longwave infrared focal plane arrays. INGS comprise multiple semimetal/semiconductor layers having compatible crystal symmetry across each heterojunction between a given semimetal and the adjoining semiconductor, wherein each semimetal layer sandwiched between semiconductor layers is grown thin enough that each semimetal layer becomes a semiconductor, and wherein each semiconductor layer is thin enough that there is coupling between adjacent semiconductor layers. The present invention utilizes INGS, which are fabricated to meet the criteria E.sub.g.sup.ind h&ohgr; E.sub.g.sup.dir, especially where h&ohgr; 100 meV, as the optical material for optical switches. The present invention also utilizes INGS as optical detectors if they are fabricated such that E.sub.g.sup.ind E.sub.g.sup.dir h. omega., especially where h&ohgr; is less than 155 meV.
机译:本发明涉及基于间接窄间隙超晶格(INGS)作为活性光学材料的在红外下工作的新型光学器件。新颖的光学设备包括:(1)宽带全光开关,将低光强度下的小插入损耗与高强度下的有效光开关和光限制相结合,以及(2)具有高采集效率和低隧道噪声电流的宽带红外探测器,适用于长波红外焦平面阵列。 INGS包括多个半金属/半导体层,这些半金属/半导体层在给定的半金属和相邻的半导体之间的每个异质结上具有兼容的晶体对称性,其中夹在半导体层之间的每个半金属层生长得足够薄,以使每个半金属层成为半导体,并且其中每个半导体层都很薄足以在相邻的半导体层之间存在耦合。本发明利用了INGS,其被制造为满足标准,例如,sup.ind <h&ohgr。 <例如sup.dir,尤其是在h&ohgr; <100 meV,用作光开关的光学材料。如果将INGS制造为使得例如sind.ind <Esg.dir <h,则本发明还利用INGS作为光学检测器。 Ω,尤其是在h&ohgr;小于155 meV。

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