Optical properties of II-VI semiconductor materials and superlattice structures.

摘要

The objective of this research was to investigate the optical properties of II-VI semiconductor materials for device applications. This research addressed three main issues: (1) heavily doped n-type CdTe:I and Hg;The CdTe:I layers exhibited a photoluminescence (PL) intensity greater by a factor of 10;The first 300K PL excitation spectra reported showed separated and pronounced resonances associated with the ground (X;Systematic studies of the excitation-intensity and magnetic-field dependence of the PL revealed direct evidence of excitonic contribution to the observed luminescence in Hg;Luminescence studies from ZnS layers identified emission from X