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首页> 外文期刊>Physica, C. Superconductivity and its applications >Measurement of in-plane magnetic relaxation in RE-123 coated conductors by use of scanning Hall probe microscopy
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Measurement of in-plane magnetic relaxation in RE-123 coated conductors by use of scanning Hall probe microscopy

机译:使用扫描霍尔探针显微镜测量RE-123涂层导体中的面内磁弛豫

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摘要

We have investigated electric field criterion of in-plane critical current density in a coated conductor characterized by scanning Hall-probe microscopy (SHPM). From remanent field distribution and its relaxation measurements, we could obtain critical current distribution and induced electric field simultaneously by considering the Biot-Savart law and the Faraday's law, respectively. These results lead us to evaluate a distribution of local critical current density and the corresponding criterion of electric field. As a result, it was found that the electric field criterion for the SHPM analysis was several orders lower than that used in the conventional 4-probe resistive method. However, the data point obtained by the SHPM shows good agreement with E-J curve analytically extended from the measurements by the 4-probe method. This means that we could characterize in-plane distribution of critical current density in a coated conductor at an electric field criterion quantitatively by this method in a nondestructive manner. These findings will be very important information since the uniformity of local critical current density in a coated conductor at extremely low electric fields is a key issue (1) especially for DC applications, (2) for quality control of coated conductors, and (3) for the standardization of the characterization of critical current among different methods.
机译:我们已经研究了以扫描霍尔探针显微镜(SHPM)为特征的涂层导体中面内临界电流密度的电场准则。从剩余的磁场分布及其弛豫测量值,我们可以分别考虑比奥-萨瓦特定律和法拉第定律,同时获得临界电流分布和感应电场。这些结果使我们评估了局部临界电流密度的分布以及相应的电场准则。结果,发现用于SHPM分析的电场标准比常规的四探针电阻法所用的电场标准低几个数量级。但是,通过SHPM获得的数据点与从4-探针方法测量得出的分析得出的E-J曲线显示出良好的一致性。这意味着我们可以通过这种方法以无损方式定量表征电场条件下涂覆导体中临界电流密度的面内分布。这些发现将是非常重要的信息,因为在极低的电场下,涂层导体中的局部临界电流密度的均匀性是一个关键问题(1),特别是对于DC应用;(2)用于涂层导体的质量控制;以及(3)用于不同方法之间的临界电流表征的标准化。

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