Optical, scintillation properties and defect study of Gd_2Si _2O_7:Ce single crystal grown by floating zone method

摘要

Single crystal of Gd_2Si_2O_7:Ce (GPS) presenting attractive scintillation performance was grown by the floating zone method. The vacuum ultra-violet (VUV) excitation and emission, ultra-violet (UV) excitation and emission spectra and fluorescent decay time at 77 K and RT were measured and discussed. Relative energy levels of 5d sublevels of Ce ~(3+) in GPS:Ce are detected by the VUV excitation spectrum. The UV emission curve of GPS:1%Ce peaks around 382 nm at 77 K and moves towards longer wavelength direction as temperature increases. Thermally stimulated luminescence (TSL) was employed to investigate the defects in GPS:1%Ce. Energy depths of two traps detected in GPS:1%Ce are 0.64 and 1.00 eV.