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Magneto-transport study of Landau level broadening in a gated AlGaAs/GaAs parabolic quantum well structure

机译:门控AlGaAs / GaAs抛物线形量子阱结构中Landau能级展宽的磁输运研究

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摘要

We study the Landau level broadening by analyzing the Shubnikov-de Haas oscillations in a gated AlGaAs/GaAs parabolic quantum well structure when only one electronic subband is occupied. Small-angle scattering is determined to be important in this system. The Shubnikov-de Haas oscillations are described equally well by employing Gaussian or Lorentzian broadening of the Landau levels at low magnetic field where the quantum localization effect is not important. A possible explanation is that the electronelectron interactions lead to the overlapping of adjacent Landau levels and one can not distinguish between the two broadening types.
机译:当仅占用一个电子子带时,我们通过分析门控AlGaAs / GaAs抛物型量子阱结构中的Shubnikov-de Haas振荡来研究Landau能级展宽。确定小角散射在该系统中很重要。 Shubnikov-de Haas振荡通过在量子定位效应不重要的低磁场下采用Landau能级的高斯或洛伦兹展宽同样好地描述。一种可能的解释是,电子-电子相互作用导致相邻的朗道能级重叠,并且无法区分这两种扩展类型。

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