Modeling of the transient interstitial diffusion of implanted atoms during low-temperature annealing of silicon substrates

摘要

It has been shown that many of the phenomena related to the formation of tails in the low-concentration region of ion-implanted impurity distribution are due to the anomalous diffusion of nonequilibrium impurity interstitials. These phenomena include boron implantation in preamorphized silicon, a hot implantation of indium ions, annealing of ion-implanted layers et cetera. In particular, to verify this microscopic mechanism, a simulation of boron redistribution during low-temperature annealing of ion-implanted layers has been carried out under different conditions of transient enhanced diffusion suppression. Due to the good agreement with the experimental data, the values of the average migration length of nonequilibrium impurity interstitials have been obtained. It has been shown that for boron implanted into a silicon layer preamorphized by germanium ions the average migration length of impurity interstitials at the annealing temperature of 800°C can be reduced from 11 nm to approximately 6 nm due to additional implantation of nitrogen. The further shortening of the average migration length is observed if the processing temperature is reduced to 750°C. It is also found that for implantation of ~(BF2) ions into silicon crystal, the value of the average migration length of boron interstitials is equal to 7.2 nm for thermal treatment at a temperature of 800°C.