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Charge transport study of high mobility polymer thin-film transistors based on thiophene substituted diketopyrrolopyrrole copolymers

机译:基于噻吩取代的二酮吡咯并吡咯共聚物的高迁移率聚合物薄膜晶体管的电荷输运研究

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摘要

In this paper, we report on the device physics and charge transport characteristics of high-mobility dual-gated polymer thin-film transistors with active semiconductor layers consisting of thiophene flanked DPP with thienylene-vinylene-thienylene (PDPP-TVT) alternating copolymers. Room temperature mobilities in these devices are high and can exceed 2 cm~2 V~(-1) s~(-1). Steady-state and non-quasi-static measurements have been performed to extract key transport parameters and velocity distributions of charge carriers in this copolymer. Charge transport in this polymer semiconductor can be explained using a Multiple-Trap-and-Release or Monroe-type model. We also compare the activation energy vs. field-effect mobility in a few important polymer semiconductors to gain a better understanding of transport of DPP systems and make appropriate comparisons.
机译:在本文中,我们报告了具有噻吩-乙烯-噻吩基(PDPP-TVT)交替共聚物的噻吩侧接DPP的具有有源半导体层的高迁移率双栅极聚合物薄膜晶体管的器件物理性质和电荷传输特性。这些设备的室温迁移率很高,可以超过2 cm〜2 V〜(-1)s〜(-1)。已经进行了稳态和非准静态测量,以提取该共聚物中的关键输运参数和电荷载流子的速度分布。可以使用多次诱捕或门罗型模型解释该聚合物半导体中的电荷传输。我们还比较了一些重要的聚合物半导体中的活化能与场效应迁移率,以更好地理解DPP系统的传输并进行适当的比较。

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