Analysis of silicon light emission under breakdown condition using an indirect intraband model

摘要

The light emission from silicon (npn) emitter-base junctions under breakdown condition has been modelled. The model suggests an indirect intraband processes combined with self-absorption. Good agreement between simulated and measured electroluminescence (EL) spectra is shown which demonstrates that the model is simple and more consistent with fundamental physical device characteristics particularly in the spectral range studied (1.4-2 eV).