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A scalable neural chip with synaptic electronics using CMOS integrated memristors

机译:使用CMOS集成忆阻器的带有突触电子的可扩展神经芯片

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摘要

The design and simulation of a scalable neural chip with synaptic electronics using nanoscale memristors fully integrated with complementary metal-oxide-semiconductor (CMOS) is presented. The circuit consists of integrate-and-fire neurons and synapses with spike-timing dependent plasticity (STDP). The synaptic conductance values can be stored in memristors with eight levels, and the topology of connections between neurons is reconfigurable. The circuit has been designed using a 90 nm CMOS process with via connections to on-chip post-processed memristor arrays. The design has about 16 million CMOS transistors and 73 728 integrated memristors. We provide circuit level simulations of the entire chip performing neuronal and synaptic computations that result in biologically realistic functional behavior.
机译:提出了一种具有可伸缩神经芯片的神经网络芯片的设计和仿真,该芯片使用与互补金属氧化物半导体(CMOS)完全集成的纳米级忆阻器。该电路由积分发射神经元和突触时序可塑性(STDP)组成的突触组成。突触电导值可以存储在具有八个级别的忆阻器中,并且神经元之间的连接拓扑可重新配置。该电路采用90 nm CMOS工艺设计,并通过通孔连接到片上后处理忆阻器阵列。该设计具有约1600万个CMOS晶体管和73 728个集成忆阻器。我们提供整个芯片的电路级仿真,执行神经元和突触计算,从而实现生物学上逼真的功能行为。

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