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Electrical nano-imprint lithography

机译:电纳米压印光刻

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摘要

We present a novel technique called electrical nano-imprint lithography (e-NIL) for topographic and electrostatic patterning of thermoplastic electret films at the nanometer scale. This versatile parallel process consists of simultaneously transferring micro-or nano-patterns from a conductive mold into a thermoplastic electret film and injecting positive or negative electrical charges into the bottom of the imprinted patterns. As proof of concept, we used this e-NIL process to fabricate arrays of 5μm and 300nm wide topographic charged patterns into polymethylmethacrylate (PMMA) thin films coated on silicon wafers. We demonstrated that these patterned PMMA films, exhibiting thousands of topographically confined and electrostatically active sites, can be used for high-throughput directed assembly of colloidal nanoparticles.
机译:我们提出了一种称为电子纳米压印光刻(e-NIL)的新颖技术,用于在纳米尺度上对热塑性驻极体薄膜进行形貌和静电构图。这种通用的并行过程包括将微或纳米图案同时从导电模具转移到热塑性驻极体膜中,并将正电荷或负电荷注入到压印图案的底部。作为概念验证,我们使用此e-NIL工艺将5μm和300nm宽的拓扑带电图案阵列制造为涂覆在硅片上的聚甲基丙烯酸甲酯(PMMA)薄膜。我们证明了这些图案化的PMMA薄膜具有成千上万个受地形限制和静电作用的位置,可用于胶体纳米粒子的高通量定向组装。

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