Facile Chemical Solution Deposition of High-Mobility Epitaxial Germanium Films on Silicon

摘要

The high carrier mobility and large absorption coefficient at near-infrared wavelengths make germanium one of the most attractive semiconductor materials for a wide range of applications. For example, the small band gap makes Ge a candidate for photodetectors and modulators at wavelengths in the range 1.3-1.6 μm. The high carrier mobility makes Ge the choice for high-speed transistors, which have potential applications in computers and switching systems. For many applications, the growth of Ge on Si is necessary. Different techniques have been used to grow Ge films on Si sub-strates. Unfortunately, the large capital investment, complicated processes, and a relatively small area coating have limited wide applications of these systems. Moreover, a thick buffer layer is generally required if a relaxed epitaxial Ge film is grown on Si.