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机译:硅上高迁移率外延锗薄膜的简便化学溶液沉积† sup>
Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (USA);
Department of Chemical Engineering, New Mexico State University, Las Cruces, NM 88003 (USA);
Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (USA);
Functional Nano and Soft Materials Laboratory, Soochow University, 199 Ren'ai Road, Suzhou 215123 (China);
Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (USA);
Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (USA);
Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (USA);
Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (USA);
germanium; mobility; solution deposition; thin films;
机译:硅上高迁移率外延锗薄膜的简便化学溶液沉积† sup>
机译:硅上高迁移率外延锗膜的简便化学溶液沉积
机译:通过超高真空化学气相沉积直接在硅衬底上外延生长的富锗硅锗薄膜
机译:反应性化学气相沉积法在低温下生长表观锗薄膜
机译:使用远程等离子体化学气相沉积沉积外延硅/硅锗/锗和新型高k栅极电介质。
机译:化学溶液沉积法在硅上制备大孔外延石英薄膜
机译:在金属有机化学气相沉积(mOCVD)室中使用锗烷前体在硅(001)上生长和表征锗外延膜
机译:硅和锗薄膜化学气相沉积,建模和控制