Selective deposition of smooth silicon, germanium, and silicon-germanium alloy epitaxial films

摘要

Chemical vapor deposition (CVD) is commonly used to blanket deposit or selectively deposit and grow an epitaxial film on a substrate. When the exposed portion of a substrate's crystalline material is relatively small, however, conventional CVD techniques do not work well and the resulting films are rough and may be unusable. Embodiments of the present invention provide a CVD process for selectively depositing smooth silicon, germanium, or silicon germanium alloy epitaxial films on a substrate's exposed crystalline material when the amount of exposed crystalline material is less than approximately twenty percent.