Single-Step Formation of ZnO/ZnWO_x Bilayer Structure via Interfacial Engineering for High Performance and Low Energy Consumption Resistive Memory with Controllable High Resistance States

摘要

A spontaneously formed ZnO/ZnWO_x bilayer resistive memory via an interfacial engineering by one-step sputtering process with controllable high resistance states was demonstrated. The detailed formation mechanism and micro-structure of the ZnWO_x. layer was explored by X-ray photoemission spectroscopy (XPS) and transmission electron microscope in detail. The reduced trapping depths from 0.46 to 0.29 eV were found after formation of ZnWO_x layer, resulting in an asymmetric I—V behavior. In particular, the reduction of compliance current significantly reduces the switching current to reach the stable operation of device, enabling less energy consumption. Furthermore, we demonstrated an excellent performance of the complementary resistive switching (CRS) based on the ZnO/ZnWO_x bilayer structure with DC endurance >200 cycles for a possible application in three-dimensional multilayer stacking.