Influence of Deformation on the Spectrums of Damping of Photoconductivity in Strongly Compensated Silicon

摘要

The basis of research of influencing of monaxonicly elastic compression on spectra of damping of photoconductivity in Si is determined the physical gear change of a photocurrent and barometric factor of displacement of a steep level of manganese. In spectral relation of a photo of conductance, at simultaneous illumination by monochromatic and integral light, for is model Si with a degree of compensation K ≥ 0.9 since energy of a homo geneous light the hv = 0.62 eV, is watched sharp decreasing of a photo current, the infra-red damping of photoconductivity is observed. It testifies definition volume, that accountable center behind damping photoconductivity is manganese in an interstitial condition Mn{sup}(++) with the electronic configuration 3d{sup}54s{sup}0 and level obtained E{sub}c- 0.5 eV as a result of compensation by small-sized acceptors of a boron. Infra-red decreasing photoconductivity descends because of electron transition to a level of manganese in a conduction band and its further acquisition on a level of a recombination N{sub}r, which one then catches a vacant electron site. The basis of research of influencing of monaxonicly elastic compression on spectra of damping of photoconductivity in Si is determined the physical gear change of a photo-current and barometric factor of displacement of a steep level of manganese.