Epitaxial growth of GaN on NGO substrates by HVPE method - development of GaN substrates for fabrication of laser diodes

摘要

The significant progress in the technology of III-N laser diodes has been done by using various epitaxial technologies. The reduction of defects in epitaxial layers improves the performance of III-N laser diodes. Growth of III-N layers on GaN substrates is effective to reduce the defects. So high quality GaN substrates are highly required. In the present work, thick free-standing GaN epitaxial films were grown on nearly lattice matched NdGaO{sub}3 (NGO) substrates for GaN by HYPE method. The growth condition was optimized. The films were evaluated by XRC, PL, CL. The minimum XRC FWHM value of 180 arcsec was obtAlNed.