共振カンチレバーゲート型HEMTのIsSpiceモデリング

摘要

In this paper we developed lumped equivalent circuit model for the resonant sensor based on micromachined high-electron mobility transistor (HEMT) in which suspended resonant cantilever plays a role of a floating gate. Mechanical oscillations of the cantilever and electromechanical transducer are represented by relevant circuit components. The developed equivalent circuit has been used in IsSpice simulation of the performance of the micromachined HEMT under consideration. The simulated source-drain current reveals a peak at a frequency corresponding to resonant frequency of cantilever mechanical oscillations. The effect of damping of such oscillations and contribution of ungated parts of 2DEG channel to the HEMT performance have been demonstrated. The proposed approach can be used for optimization of resonant sensors based on micromacined HEMT.