半導体スイッチングデバイスのゲート回路およびゲート駆動方法

摘要

To provide a gate circuit of a semiconductor switching device, capable of suppressing the generation of a ringing without increasing a turn-on power loss.SOLUTION: A gate circuit of a semiconductor switching device, comprises: a current measurement part (a converter 11) that converts a main current I flowing through an FET 12 of an electric power conversion device to a voltage as compared with the magnitude of the main current I; an excess voltage conversion part (a diode 15) that outputs an excess voltage exceeding a specific value of the voltage converted by the current measurement part; a voltage level adjustment part (a transformer 16) that adjusts the voltage level of the excess voltage output by the excess voltage conversion part; and a gate voltage control part setting the voltage obtained by subtracting the excess voltage output by the excess voltage conversion part and adjusted by the voltage level adjustment part from a voltage VGon of an on-gate power source 17, as the gate voltage of the FET 12.SELECTED DRAWING: Figure 1