TEM investigation of 90° domain structure of PZT thin films and related ferroelectric property

摘要

The formation process of the 90° domain structure of PZT thin film was investigated by heating XTEM method, and the dependency of the 90° domain structure and the P-E hysteresis of the multi-layered WP thin films deposited on LSCO/CeO{sub}2/YSZ/Si was investigated by cross sectional HRTEM method. Large 90° domains of 20nm in width penetrated the WF layer for the composition of Zr/Ti=20/80. On the other hand, the small 90° domains of 5nm in width existed free from the constraint of the interface for the composition of Zr/Ti=50/50. The difference of P-E hysteresis of PZT20/80 is small regardless of the substrates, on the other hand that of PZT50/50 is large.