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首页> 外文期刊>電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials >15μm-pitch Bump Interconnections Relied on Flip-chip Bonding Technique - for Advanced Chip Stacking Applications
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15μm-pitch Bump Interconnections Relied on Flip-chip Bonding Technique - for Advanced Chip Stacking Applications

机译:依靠倒装芯片键合技术的15μm间距凸点互连-适用于高级芯片堆叠应用

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This paper reports the development of reliable fine-pitch micro-bump Cu/Au interconnections relied on a high-precision room-temperature bonding approach. The accuracy of the bonding process is improved by means of modifying the conventional bump/planar-bonding-pad interconnections, to form self-aligned micro-bumps/truncated inverted pyramid (TIP) bonding pads, i.e., misalignment self-correction elements (MSCEs). Thermosonic flip-chip bonding (FCB) technique is utilized to form reliable bonds between these MSCEs at acceptable low temperatures. Applying the proposed bonding approach, the demonstration of fine-pitch Cu bump to Au bonding pad interconnects chip stacking has been relied. The microstructure analyses reveal that the 15-μm-pitch micro-bump joints were made at room temperature.
机译:本文报道了基于高精度室温键合方法的可靠的细间距微凸点Cu / Au互连的发展。通过修改常规凸块/平面焊盘的互连,以形成自对准的微凸块/截顶的倒金字塔(TIP)焊盘,即未对准的自校正元件(MSCE),可以提高接合过程的精度)。利用热超声倒装芯片键合(FCB)技术在可接受的低温下在这些MSCE之间形成可靠的键合。应用所提出的键合方法,已经证明了将小间距铜凸块用于Au键合焊盘互连芯片堆叠的演示。微观结构分析表明,节距为15μm的微型凸点是在室温下制成的。

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