Extraction Method of the Interface and Nitride Trap Density in Nitride-Based Charge Trapped Flash Memories Using an Optical Response

摘要

Optical characterization method for extracting the energy level of both Si/SiO{sub}2 interface (D{sub}(it)) and nitride trap density (D{sub}(nitride)) in nitride-based Charge Trapped Flash memories is proposed. As the first method, the D{sub}(it) is successfully extracted from the optical response of a subthreshold current, without both an electrical stress and substrate current measurement. As the second method, the D{sub}(nitride) is successfully extracted from the optical response of a capacitance-voltage (C-V) curve, without both a temperature-dependence and time-dependence measurement. Proposed method is generally applicable to the extraction of both shallow and deep traps in the nitride layer by controlling the wavelength of the optical source.