Nitrided GdTiO as charge-trapping layer for flash memory applications

摘要

Based on capacitor with the structure of Al/Al2O 3/GdTiO (N)/SiO2/Si, the charge-trapping properties of GdTiO and GdTiON films were investigated. Compared to the memory device with GdTiO film as charge-trapping layer, the one with GdTiON showed higher program/erase speed, larger memory window, and better retention characteristic due to additional charge traps with desirable energy level created by nitrogen incorporation in the film. © 2012 IEEE.