An accurate drain current model of SOI high voltage lateral MOSFETs including self-heating effect

摘要

We have developed the nonisothermal drain current model of SOI high voltage (HV) lateral MOSFETs including the self-heating effect which is caused by the heat generated in high voltage integrated circuits and by the low thermal conductance. The thermal network of high voltage lateral MOSFETs is composed of the lumped heat capacitors, lumped thermal conductors and lumped heat sources considering the physical effect of isothermal drain current and transient temperature-rate with time. The simulation results using a nonisothermal circuit model show the negative differential resistance in I-V characteristics and have good agreement with the measurements when long pulses are applied to gate of high voltage lateral MOSFETs.