Preparation of Pb(Zr,Ti)O{sub}3 Thin Films by Sol-Gel Technique for Ferroelectric-Gate Thin Film Transistor Applications

摘要

We have fabricated Pb(Zr,Ti)O{sub}3 (PZT) thin films by the sol-gel technique for thin film transistor applications. It is found that the PZT films fabricated with low-pressure consolidation process show excellent electrical properties and surface morphologies. A remanent polarization (Pr) and coercive field (E{sub}c) of the PZT thin films crystallized at 600℃ are 35μC/cm{sup}2 and 64kV/cm, respectively. We next apply this PZT film to fabricate thin film transistors using indium tin oxide (ITO) as a channel layer. It is demonstrated that the PZT/ITO thin film transistor has good transistor characteristics with nonvolatile memory function.