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机译:由ZnO / Pb(Zr,Ti)O_3堆叠结构组成的铁电栅薄膜晶体管中电子通道和畴壁的相关运动动力学
Advanced Technology Research Laboratory, Panasonic Corporation, Seika, Kyoto 619-0237, Japan,Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8503, Japan;
Advanced Technology Research Laboratory, Panasonic Corporation, Seika, Kyoto 619-0237, Japan;
Advanced Technology Research Laboratory, Panasonic Corporation, Seika, Kyoto 619-0237, Japan;
Advanced Technology Research Laboratory, Panasonic Corporation, Seika, Kyoto 619-0237, Japan;
Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation, Nagaokakyo, Kyoto 617-8520, Japan;
Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8503, Japan;
Advanced Technology Research Laboratory, Panasonic Corporation, Seika, Kyoto 619-0237, Japan;
机译:高性能YBTI_XO_Y / PBZR_(0.53)TI_(0.47)O_3 INGAZNO薄膜晶体管的堆叠栅极电介质
机译:纳米级铁电畴的去极化场调谐(001)PBZR_(0.4)TI_(0.6)O_3 / SRTIO_3 / PBZR_(0.4)TI_(0.6)O_3外向异质结构
机译:Pb(Zr_(0.3)Ti_(0.7)O_3栅绝缘体的Al掺杂ZnO薄膜晶体管的研究
机译:Cofe_2O_4薄膜厚度对(001)的多二二二核性的影响(Zr_(0.5)Ti_(0.5))O_3 / CoFe_2O_4 / Pb(Zr_(0.5)Ti_(0.5))O_3三层结构
机译:晶体缺陷对薄膜Pb(Zr,Ti)O3中畴壁运动的影响。
机译:Pb(Zr0.20Ti0.80)O3外延薄膜中的畴壁运动
机译:失配弛豫和a域的形成对四方PbZr0.4Ti0.6O3 / PbZr0.2Ti0.8O3薄膜异质结构的电学性能的影响:实验和理论方法