Dependence of light intensity for magnetoresistance effect of four-terminal Si MOSFET induced by lateral magnetic field - property of four-terminal MOSFET due to light irradiation and magnetic field

摘要

The photoconductive effect in a four-terminal n-channel MOSFET was generated due to light irradiation. The drain current I{sub}D and the channel-base current I{sub}(CB) were saturated with the illuminance E{sub}L. The I{sub}D decreased due to magnetic field and its parallel relative sensitivity of magnetic effect S{sub}(RD) was independent of the drain voltage V{sub}D. The S{sub}(RD) was saturated with the E{sub}L and increased in proportion to the magnetic flux density B. On the other hand, the I{sub}(CB) decreased due to magnetic field under light irradiation and its vertical relative sensitivity of magnetic effect S{sub}(RT) was independent of the E{sub}L, but decreased due to light irradiation. The maximum value of S{sub}(RD) was 1.7 %/T when V{sub}D=0.5 V, B=1.0 T, E{sub}L=5610 lx. In this report, the change of I{sub}D, I{sub}(CB) S{sub}(RD) and S{sub}(RT) due to light irradiation and magnetic field was considered.