Epitaxial Growth of MnSb Films Fabricated by Planar Sputtering: Effect of Substrate Temperature and Bias on Epitaxial Growth

摘要

Ferromagnetic MnSb films were fabricated onSi(100) and (111) single crystal substrates by dc planarsputtering. The effects of the substrate temperature and bias onthe epitaxial growth are discussed. The main findings are asfollows: (a) MnSb grains grown at T_(sub) < 170 deg C were(110) oriented irrespective of the crystal planes of the Sisubstrates; (b) MnSb grains with (101), (102), and (001)orientations existed in films prepared at T_(sub) > 170 deg C onSi(100) substrate; (c) MnSb grains epitaxially grown on Si(111)substrate were (101)-oriented at T_(sub) = 200 deg C and (001)-oriented at T_(sub) = 250 deg C; (d) in the sputtering methodused, the substrate voltage changed from 0 to -200 V,corresponding to a change in the ion assist energy from 0 to 40eV/atom; and (e) the use of an ion assist of 15 eV/atom toSi( 111) substrate decreased the epitaxial growth temperature ofMnSb(00 1)-oriented grains from 250 deg C to 200 deg C.