NV-SRAM: a nonvolatile SRAM using ferroelectric capacitors

摘要

This paper describes two new circuit techniques for nonvolatile SRAMs with back-up ferroelectric capacitors (NV-SRAMs). These circuits are able to overcome the size and low-voltage-reliability problems faced by the original NV-SRAM. A new 0.25-mm NV-SRAM cell occupies 9.7 μm{sup}2, that is the same area as an SRAM cell. A high-voltageegative-voltage plate line driver allows a low-voltage-operation NV-SRAM array's improving its nonvolatile retention characteristics. A 512-Kbit test macro has also been designed.