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FERROELECTRIC CAPACITOR FOR FLEXIBLE NONVOLATILE MEMORY DEVICE, FLEXIBLE NONVOLATILE FERROELECTRIC MEMORY DEVICE, AND MANUFACTURING METHOD FOR THE SAME
FERROELECTRIC CAPACITOR FOR FLEXIBLE NONVOLATILE MEMORY DEVICE, FLEXIBLE NONVOLATILE FERROELECTRIC MEMORY DEVICE, AND MANUFACTURING METHOD FOR THE SAME
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机译：柔性非易失性存储器的铁电电容器，柔性非易失性存储器的铁电电容器及其制造方法
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摘要
The present disclosure relates to a flexible nonvolatile ferroelectric memory device, a 1T-1R (1Transistor-1Resistor) flexible ferroelectric memory device, and a manufacturing method for the same.
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