Ferroelectric Thin-Film Capacitors for Flexible Nonvolatile Memory Applications

摘要

This letter reports the fabrication of $hbox{PbZr}_{x}hbox{Ti}_{1-x} hbox{O}_{3}$ (PZT) thin-film capacitors on flexible plastic substrates. The PZT film was formed on a wafer using a sol–gel method and transferred to a thin plastic substrate using an elastomeric stamp. The PZT film on the plastic substrate showed a well-saturated hysteresis loop with a $P_{r}$ of $sim!hbox{20} muhbox{C}/hbox{cm}^{2}$ and a $V_{c}$ of $ sim$1.1 V at a supplied voltage of 3 V, which are similar to those observed for PZT films on rigid wafers, as well as stable operation under an 8-mm bending radius. These characteristics suggest promising applications in flexible electronic systems.