Fabrication and Characterization of Metal–Ferroelectric (PbZr0.53Ti0.47O3)–Insulator (Dy2O3)–Semiconductor Capacitors for Nonvolatile Memory Applications

摘要

[[abstract]]Metal-ferroelectric-insulator-semiconductor capacitors with Pb(Zr0.53,Ti0.47)O3 (PZT) ferroelectric layer and dysprosium oxide (Dy2O3) insulator layer were fabricated and characterized. The measured memory window of 0.86 V was close to the theoretical value ΔW ≈ 2dfEc ≈ 0.78 V at a sweep voltage of 8 V. The size of the memory window as a function of PZT film thickness was discussed. The C-V flatband voltage shift (ΔVFB) as function of charge injection was also studied. An energy band diagram of the Al/PZT/Dy2O3/p-Si system was proposed to explain the memory window and flatband voltage shift. The charge injection is mainly due to electrons.