A quasi-matrix ferroelectric memory for future silicon storage - a new high-density and high-speed nonvolatile memory using ferroelectric film

摘要

The memory unit consists of multi ferroelectric capacitors that store individual bits and share one access transistor. Degradation by disturbance and cross-talk effects are suppressed to an acceptable level. These memory cells can be multi-stacked enlarging the packing density by a number of times.