Ferroelectrics thin-film coated substrate and manufacture method thereof and nonvolatile memory comprising a ferroelectrics thinfilm coated substrate

摘要

A ferroelectrics thin-film coated substrate is manufactured in a low- temperature process by using a ferroelectrics having a dense and even surface and exhibiting a large residual spontaneous polarization. A ferroelectrics thin-film coated substrate has a structure with a buffer layer, a growth layer allowing a ferroelectrics thin-film to grow, and a ferroelectrics thin-film made of a ferroelectric material having a layered crystalline structure expressed in the chemical formula Bi.sub.2 A.sub.m-1 B.sub.m O.sub.3m+3 (A is selected from Na.sup.1+, K.sup.1+, Pb. sup.2+, Ca.sup.2+, Sr.sup.2+, Ba.sup.2+, Bi.sup.3+ and the like, B is selected from Fe.sup.3+, Ti.sup.4+, Nb.sup.5+, Ta.sup.5+, W.sup.6+ and Mo. sup.6+, and m is an integer not less than 1) formed in succession.