Ferroelectric thin-film coated substrate, method for its manufacture and nonvolatile memory comprising such a substrate

摘要

To provide a ferroelectrics thin-film coated substrate manufacturable in a low-temperature process by using a ferroelectrics having a dense and even surface and exhibiting a large residual spontaneous polarization, and the manufacture method thereof. A ferroelectrics thin-film coated substrate (1) comprising a structure that a buffer (5), a growth layer (6) allowing a ferroelectrics thin-film to grow, and a ferroelectrics thin-film (7) made of a ferroelectric material having a layered crystalline structure expressed in the chemical formula Bi₂ A_m-1 B_m O_3m+3 (A is selected from Na¹⁺, K¹⁺, Pb²⁺, Ca²⁺, Sr²⁺, Ba²⁺, Bi³⁺ and the like, B is selected from Fe³⁺, Ti⁴⁺, Nb⁵⁺, Ta⁵⁺, W⁶⁺ and Mo⁶⁺, and m is an integer not less than 1) are formed in succession.