Ferroelectric thin-film coated substrate, method for its manufacture and nonvolatile memory comprising such a substrate

摘要

To provide a ferroelectrics thin-film coated substrate manufacturable in a low-temperature process by using a ferroelectrics having a dense and even surface and exhibiting a large residual spontaneous polarization, and the manufacture method thereof. A ferroelectrics thin-film coated substrate (1) comprising a structure that a buffer (5), a growth layer (6) allowing a ferroelectrics thin-film to grow, and a ferroelectrics thin-film (7) made of a ferroelectric material having a layered crystalline structure expressed in the chemical formula Bi2 Am-1 Bm O3m+3 (A is selected from Na1+, K1+, Pb2+, Ca2+, Sr2+, Ba2+, Bi3+ and the like, B is selected from Fe3+, Ti4+, Nb5+, Ta5+, W6+ and Mo6+, and m is an integer not less than 1) are formed in succession.