Ferroelectric storage device, flash memory, and nonvolatile random access memory

摘要

The device includes a channel region (32C) formed in a substrate (32) having a first conductivity type, a first diffusion region (32A) formed in the substrate at a first side of the channel region with a second, opposite conductivity type, a second diffusion region (32B) formed in the substrate at a second side of said channel region with the second conductivity type, a ferroelectric film (33C) formed on the substrate so as to cover the channel region, and a gate electrode (33D) provided on the ferroelectric film, wherein the channel region has the second conductivity type. IMAGE