Radiation effects in VLSI Ferroelectric Random Access nonvolatile Memory

机译：VLSI铁电随机存取非易失性存储器中的辐射效应

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The results of experimental researches of radiation resistance of VLSI Ferroelectric Random Access nonvolatile Memory (FRAM) at influence of gamma-irradiation Co⁶⁰ are submitted.

机译：提出了VLSI铁电随机存取非易失性存储器（FRAM）在γ辐照Co ^{60 影响下的抗辐射性能的实验研究结果。}

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来源
《2012 22nd International Crimean Conference Microwave amp; Telecommunication Technology.》|2012年|p.791- 793|共3页
会议地点 Sevastopol(UA);Sevastopol(UA)
作者
Korshunov F. P.; Bogatyrev Yu. V.; Lastovskiy S. B.; Turtsevich A. S.; Shwedov S. V.; Belous A. I.; Lozitskiy E. G.; Kulgachev V. I.;
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Scientific-Practical Materials Research Centre NAS, 19, P. Brovki Str., Minsk, 220072, Belarus;

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原文格式 PDF
正文语种 eng
中图分类无线电中继通信、微波通信;无线电中继通信、微波通信;
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1. Electrical properties of metal-ferroelectric-insulator-semiconductor structures based on ferroelectric polyvinylidene fluoride copolymer film gate for nonvolatile random access memory application [J] . S. H. Lim, A. C. Rastogi, S. B. Desu Journal of Applied Physics . 2004,第10期

机译：基于铁电聚偏二氟乙烯共聚物薄膜栅极的金属-铁电绝缘体-半导体结构在非易失性随机存取存储器中的电学性能
2. Improved electric behaviors of the Pt/ Bi_(1-x)La_xFe_(0.92)Mn_(0.08)O3~+-Si heterostructure for nonvolatile ferroelectric random-access memory [J] . Jinzhong Zhang, Zhihua Duan, Hao Zhang Meijie Han Journal of Materials Chemistry, C. materials for optical and electronic devices . 2013,第39期

机译：非易失性铁电随机存取存储器的Pt / Bi_（1-x）La_xFe_（0.92）Mn_（0.08）O3 / n〜+ -Si异质结构的改进电学行为
3. Normally-off type nonvolatile static random access memory with perpendicular spin torque transfer-magnetic random access memory cells and smallest number of transistors [J] . Chika Tanaka, Keiko Abe, Hiroki Noguchi, Japanese journal of applied physics . 2014,第4S期

机译：具有垂直自旋扭矩传递磁性随机存取存储单元和最少数量晶体管的常关型非易失性静态随机存取存储器
4. Radiation effects in VLSI Ferroelectric Random Access nonvolatile Memory [C] . Korshunov F. P., Bogatyrev Yu. V., Lastovskiy S. B., International Crimean Conference on Microwave Telecommunication Technology . 2012

机译：VLSI铁电随机接入非易失性存储器的辐射效应
5. Processing and characterization of ferroelectric and electrode materials for nonvolatile and dynamic random-access memories [D] . Vellaikal, Manoj 1996

机译：用于非易失性和动态随机存取存储器的铁电和电极材料的处理和表征
6. Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory [O] . Jin Hyuck Heo, Dong Hee Shin, Sang Hwa Moon, -1

机译：有机-无机杂化钙钛矿非易失性电阻随机存取存储器中有关晶粒尺寸的记忆效应行为
7. Thermally Stable and Radiation Hard Ferroelectric Hf0.5Zr0.5O2 Thin Films on Muscovite Mica for Flexible Nonvolatile Memory Applications [O] . -1

机译：在柔性非易失性存储器应用中，在Muscovite MICA上进行热稳定和辐射硬质电气HF0.5ZR0.5O2薄膜
8. Electrical Characterization of VLSI (Very Large Scale Integrated) RAMs (Random Access Memories) and PROMs (Programmable Random Access Memories) [R] . Barr, T., Hoang, T., Moyers, R., 1987

机译：VLsI（超大规模集成）Ram（随机存取存储器）和pROm（可编程随机存取存储器）的电气特性

Radiation effects in VLSI Ferroelectric Random Access nonvolatile Memory

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