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A ferroelectric memory device, a flash memory, and a nonvolatile random access memory
A ferroelectric memory device, a flash memory, and a nonvolatile random access memory
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机译:铁电存储设备,闪存和非易失性随机存取存储器
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摘要
The present invention provides a ferroelectric memory device of simple structure having a MFS-FET type. The present invention forms a channel region of the same conduction type as a source region and a drain region in a semiconductor substrate, and forms a ferroelectric film and a gate electrode in such a channel region.
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