Formation of ultra-thin silicon dioxide films at low temperatures using remote plasma oxidation and application for gate insulators

摘要

SiO{sub}2 films have been formed directly on a silicon surface by remote plasma oxidation at low temperatures (500～680℃). We have investigated the electrical properties and Si/SiO{sub}2 interface properties using a quasi-static C-V method. The breakdown electric field exceeded 10 MV/cm. The Si/SiO{sub}2 interface state density and the fixed charge density could be reduced with increasing oxidation temperature. MOSFETs with plasma-oxidized SiO{sub}2 exhibited an effective channel mobility of 350 cm{sup}2/Vs. The interface properties were also characterized by using MOSFETs as gate controlled diodes.