Synthesis of n-DLC:P/p-Si Photovoltaic Cell Using an Ion Beam Plating Method - Dependence of Distance from the Ion Source to the Substrate on the Optoelectronic Properties

摘要

We report the effects of varying the distance between a plasma ion source and a substrate on the electrical and optical properties of diamond-like carbon (DLC) thin films grown On n-silicon by using an ion-beam plating method. The distance of the substrate from the top of the reflector was in the range of 150-300 mm. The optical band gap, I-V characteristics, and spectral distribution of the DLC films were measured. A maximum open-circuit voltage (V{sub}(OC)) of 76 mV and a maximum short-circuit current (I{sub}(SC)) of 49.0 μA were obtained.