Fabrication of n-DLC/i-SiC/p-Si photovoltaic cells by pulsed laser deposition at the electrical field

摘要

We report on the fabrication of n-DLC/i-SiC/p-Si photovoltaic cell by pulsed laser deposition at electrical field. Raman spectra showed that the I(D)/I(G) ratio of n-DLC increased with increasing temperature, as well as open voltage and current density. The SiC layers were analyzed under irradiation by electron spectroscopy for chemical analysis. Our method could synthesize i-SiC layers between n-DLC and p-Si.