Study of dislocations in silicon carbide single crystal by polarized optical method

摘要

Individual dislocations in 6H-SiC single crystals were studied by photoelastisity (optical polarized analysis) method. Edge dislocations with [0001] axis both belonging and not belonging to theoretically predicted glide plane Systems were identified. It is shown that the photoelastisity method allows to display not only dislocations parallel to the observation direction but also those with the axes forming 0-50 deg angles with the observation direction. Computer analysis of pictures showed peculiarities of contrast of rosettes with double beam reflection from dislocations. The method is highly effective for silicon carbide study.