Electrical Characterization of Separation by Implanted Oxygen (SIMOX) Substrate

摘要

Electrical performance of low-dose separation by implanted oxygen (SIMOX) substrates was evaluated, which substrates are a promising semiconductor material for high speed, low power LSIs. It was quantitatively clarified that the dielectric breakdown behavior of buried oxide (BOX) in the SIMOX substrate was dominated by Si islands in the BOX. The size and density of the Si islands were found to be reducible by the oxygen dose control and the internal thermal oxidation (ITOX) process. Through optimization of these measures, a BOX breakdown field of about 8 MV/cm, comparable to that of thermally grown oxides, was attained. The gate oxide integrity of a low-dose SIMOX produced by the ITOX process (ITOX-SIMOX) was found to be equal or superior to that of the bulk CZ Si substrates.