METHOD FOR MEASURING OXYGEN ION AMOUNT IMPLANTED TO SIMOX SUBSTRATE, BOX LAYER THICKNESS ESTIMATING METHOD, AND SUBSTRATE FOR STANDARD TEST PIECE

摘要

PROBLEM TO BE SOLVED: To solve problems in the conventional measurement method of an oxygen ion amount implanted to a SIMOX (separation by implanted oxygen) substrate that the desired thickness of a BOX (buried oxide film) layer and of an active layer in a final SIMOX product cannot be obtained because the amount of monitored element or over is implanted into the semiconductor substrate.;SOLUTION: The method disclosed herein utilizes an FT-IR apparatus to calculate the difference between a spectrum waveform before oxygen ions are implanted to a silicon substrate and a spectrum waveform after the oxygen ions are implanted to the silicon substrate in terms of spectrums. Thus, the method can accurately measure the ion implantation amount and estimate the thickness of the BOX layer of the SIMOX product.;COPYRIGHT: (C)2005,JPO&NCIPI