Investigation of plasma induced damage on CMOS-ICs using atmospheric plasma cleaning equipment

摘要

Plasma induced damage on CMOS-ICs using atmospheric plasma cleaning equipment was investigated, which was carried out by using MOS Tr TEG (Test Element Group) with gate oxide thickness 3nm - 100nm. MOS Tr characteristics such as threshold voltage, subthreshold swing, breakdown voltage, Qbd life time have been measured. The measured data for the irradiated and non-irradiated samples clearly demonstrated that the plasma induced damage depends on gate oxide thickness and anntena ratio as well. We report the degradation mechanism behind the experimental data.